Cover of the work “Dependence of the parameters of high-power silicon carbide microwave transistors with a Schottky gate on design-technological and external factors”. Author: Chernykh, Maksim Igorevich. Degree: Candidate of Sciences. Year: 2016

Dependence of the parameters of high-power silicon carbide microwave transistors with a Schottky gate on design-technological and external factors

Voronezh State Technical University, Voronezh

165 pp.

Dependence of the parameters of high-power silicon carbide microwave transistors with a Schottky gate on design-technological and external factors — Chernykh, Maksim Igorevich — 2016 — Russian Dissertation Library