Study of the features of the lasing mechanism of multimode continuous-wave InGaAsP/InP (λ = 1.3 μm) separate-confinement lasers grown by the short-contact liquid-phase epitaxy method

Saint Petersburg

98 pp.

Study of the features of the lasing mechanism of multimode continuous-wave InGaAsP/InP (λ = 1.3 μm) separate-confinement lasers grown by the short-contact liquid-phase epitaxy method — Zaytsev, S. V. — 1993 — Russian Dissertation Library