Cover of the work “Effect of dielectric thickness nonuniformity on the properties of tunnel MOS structures Al/(1-4 nm)SiO2/Si”. Author: Tyaginov, Stanislav Eduardovich. Degree: Candidate of Sciences. Year: 2006

Effect of dielectric thickness nonuniformity on the properties of tunnel MOS structures Al/(1-4 nm)SiO2/Si

Saint Petersburg

146 pp.