Study of defect formation in epitaxial silicon layers under irradiation and heat treatment
Tsikunov, Aleksandr Vladimirovich, 1991, Candidate of Sciences dissertation
Minsk
161 pp.
More works in this specialty
- Effect of dielectric thickness nonuniformity on the properties of tunnel MOS structures Al/(1-4 nm)SiO2/Si
Tyaginov, Stanislav Eduardovich · 2006 · Candidate of Sciences
- Structure and electrophysical properties of tellurium crystals and the Te80Si20 alloy obtained at different gravity levels
Yakimov, Sergey Vladimirovich · 2005 · Candidate of Sciences
- Theory of photoelectric phenomena due to the absence of central symmetry of the medium
Entin, Matvei Vulfovich · 2005 · Doctor of Sciences
- Kinetics of atomic transformations of a crystalline surface during epitaxial growth and accompanying processes (simulation)
Yanovitskaya, Zoya Shmerovna · 2003 · Doctor of Sciences
- Optical properties and structure of amorphous carbon
Yastrebov, Sergey Guryevich · 2003 · Doctor of Sciences