Cover of the work “Structure and electrical properties of doped polycrystalline silicon films obtained by molecular beam epitaxy”. Author: Shengurov, Dmitry Vladimirovich. Degree: Candidate of Sciences. Year: 1998

Structure and electrical properties of doped polycrystalline silicon films obtained by molecular beam epitaxy

Nizhny Novgorod

141 pp.

Structure and electrical properties of doped polycrystalline silicon films obtained by molecular beam epitaxy — Shengurov, Dmitry Vladimirovich — 1998 — Russian Dissertation Library