Structural and morphological features of aluminum nitride depending on preparation conditions

More works in this specialty

1. Development of the molecular layering method for the synthesis of ultrathin films of metal chalcogenides

   Zheleznyakova, Anastasiya Vyacheslavovna · 2007 · Candidate of Sciences · Moscow State Institute of Electronic Technology

   • 05.27.06 Technology and equipment for production of semiconductors, electronic materials and devices
2. Solar cells based on hydrogenated amorphous silicon produced in a low-frequency glow discharge

   Chernomordik, Vladimir Dmitrievich · 2001 · Candidate of Sciences

   • 05.27.06 Technology and equipment for production of semiconductors, electronic materials and devices
3. Technological fundamentals of the development of composite secondary electron emitters for vacuum electronic devices

   Zhdanov, Sergey Mikhaylovich · 2001 · Doctor of Sciences

   • 05.27.06 Technology and equipment for production of semiconductors, electronic materials and devices
4. Development of active and passive materials for nondestructive testing instruments for units and assemblies of nuclear power plants

   Mustafinov, Eduard Nikolaevich · 2000 · Candidate of Sciences

   • 05.27.06 Technology and equipment for production of semiconductors, electronic materials and devices
5. Study and development of heat treatment processes for semiconductor materials for special applications

   Shagarov, Boris Anatolyevich · 2000 · Candidate of Sciences

   • 05.27.06 Technology and equipment for production of semiconductors, electronic materials and devices

All works in this specialty