Quantum-size strained heterostructures in the (In, Ga, Al)As system: fabrication technology by molecular beam epitaxy and study of propertiesZhukov, Aleksey Evgen'evich, 1996, Candidate of Sciences dissertation01.04.10 Semiconductor physicsSaint Petersburg158 pp.KeywordsepitaxyMore works in this specialtyDissertationEffect of dielectric thickness nonuniformity on the properties of tunnel MOS structures Al/(1-4 nm)SiO2/SiTyaginov, Stanislav Eduardovich · 2006 · Candidate of Sciences01.04.10 Semiconductor physicsDissertationStructure and electrophysical properties of tellurium crystals and the Te80Si20 alloy obtained at different gravity levelsYakimov, Sergey Vladimirovich · 2005 · Candidate of Sciences01.04.10 Semiconductor physicsDissertationTheory of photoelectric phenomena due to the absence of central symmetry of the mediumEntin, Matvei Vulfovich · 2005 · Doctor of Sciences01.04.10 Semiconductor physicsDissertationKinetics of atomic transformations of a crystalline surface during epitaxial growth and accompanying processes (simulation)Yanovitskaya, Zoya Shmerovna · 2003 · Doctor of Sciences01.04.10 Semiconductor physicsDissertationOptical properties and structure of amorphous carbonYastrebov, Sergey Guryevich · 2003 · Doctor of Sciences01.04.10 Semiconductor physicsAll works in this specialty