Peculiarities of microdefects in silicon single crystals grown by the Czochralski method revealed by X-ray diffuse scatteringZotov, Nikolai Mikhailovich, 1997, Candidate of Sciences dissertation01.04.10 Semiconductor physicsMoscow131 pp.Keywordsmicrodefects; silicon single crystalsMore works in this specialtyDissertationEffect of dielectric thickness nonuniformity on the properties of tunnel MOS structures Al/(1-4 nm)SiO2/SiTyaginov, Stanislav Eduardovich · 2006 · Candidate of Sciences01.04.10 Semiconductor physicsDissertationStructure and electrophysical properties of tellurium crystals and the Te80Si20 alloy obtained at different gravity levelsYakimov, Sergey Vladimirovich · 2005 · Candidate of Sciences01.04.10 Semiconductor physicsDissertationTheory of photoelectric phenomena due to the absence of central symmetry of the mediumEntin, Matvei Vulfovich · 2005 · Doctor of Sciences01.04.10 Semiconductor physicsDissertationKinetics of atomic transformations of a crystalline surface during epitaxial growth and accompanying processes (simulation)Yanovitskaya, Zoya Shmerovna · 2003 · Doctor of Sciences01.04.10 Semiconductor physicsDissertationOptical properties and structure of amorphous carbonYastrebov, Sergey Guryevich · 2003 · Doctor of Sciences01.04.10 Semiconductor physicsAll works in this specialty