Kinetics of impact ionization of shallow impurity centers and excitons in germanium

More works in this specialty

1. Effect of dielectric thickness nonuniformity on the properties of tunnel MOS structures Al/(1-4 nm)SiO2/Si

   Tyaginov, Stanislav Eduardovich · 2006 · Candidate of Sciences

   • 01.04.10 Semiconductor physics
2. Structure and electrophysical properties of tellurium crystals and the Te80Si20 alloy obtained at different gravity levels

   Yakimov, Sergey Vladimirovich · 2005 · Candidate of Sciences

   • 01.04.10 Semiconductor physics
3. Theory of photoelectric phenomena due to the absence of central symmetry of the medium

   Entin, Matvei Vulfovich · 2005 · Doctor of Sciences

   • 01.04.10 Semiconductor physics
4. Kinetics of atomic transformations of a crystalline surface during epitaxial growth and accompanying processes (simulation)

   Yanovitskaya, Zoya Shmerovna · 2003 · Doctor of Sciences

   • 01.04.10 Semiconductor physics
5. Optical properties and structure of amorphous carbon

   Yastrebov, Sergey Guryevich · 2003 · Doctor of Sciences

   • 01.04.10 Semiconductor physics

All works in this specialty