Cover of the work “Isovalent doping : Control of the electronic properties of GaAs and GaSb layers by acting on the system of impurities, point defects, and nanoscale clusters”. Author: Chaldyshev, Vladimir Viktorovich. Degree: Doctor of Sciences. Year: 1999

Isovalent doping : Control of the electronic properties of GaAs and GaSb layers by acting on the system of impurities, point defects, and nanoscale clusters

Saint Petersburg

51 pp.

Isovalent doping : Control of the electronic properties of GaAs and GaSb layers by acting on the system of impurities, point defects, and nanoscale clusters — Chaldyshev, Vladimir Viktorovich — 1999 — Russian Dissertation Library