Investigation and development of processes for forming non-penetrating ohmic contacts based on titanium silicide to shallow p-n junctions of silicon integrated circuits

Moscow

129 pp.

Keywords

ohmic contacts, silicon integrated circuits

Investigation and development of processes for forming non-penetrating ohmic contacts based on titanium silicide to shallow p-n junctions of silicon integrated circuits — Rainova, Maria Yuryevna — 1996 — Russian Dissertation Library