Cover of the work “Features of the formation and annealing of radiation defects in n-GaN(Si) and p-GaN(Mg) under exposure to various types of radiation”. Author: Ermakov, Viktor Sergeevich. Degree: Candidate of Sciences. Year: 2014

Features of the formation and annealing of radiation defects in n-GaN(Si) and p-GaN(Mg) under exposure to various types of radiation

L. Ya. Karpov Research Institute of Physical Chemistry, Obninsk

183 pp.

Features of the formation and annealing of radiation defects in n-GaN(Si) and p-GaN(Mg) under exposure to various types of radiation — Ermakov, Viktor Sergeevich — 2014 — Russian Dissertation Library