Development and experimental verification of a static model for calculating the maximum controllable current of a MOS thyristorChernyavskiy, Yevgeniy Vadimovich, 2004, Candidate of Sciences dissertation01.04.10 Semiconductor physics05.27.01 Solid-state electronics, radio-electronic components, micro- and nanoelectronics, quantum-effect devicesNovosibirsk119 pp.More works in this specialtyDissertationResonance processes of photostimulated emission in hydrogenated and fluorinated nanocrystalline silicon filmsMilovzorov, Dmitriy Evgen'evich · Doctor of Sciences · National Research University Moscow Power Engineering Institute01.04.10 Semiconductor physicsDissertationEffect of dielectric thickness nonuniformity on the properties of tunnel MOS structures Al/(1-4 nm)SiO2/SiTyaginov, Stanislav Eduardovich · 2006 · Candidate of Sciences01.04.10 Semiconductor physicsDissertationStructure and electrophysical properties of tellurium crystals and the Te80Si20 alloy obtained at different gravity levelsYakimov, Sergey Vladimirovich · 2005 · Candidate of Sciences01.04.10 Semiconductor physicsDissertationSize quantization and electron tunneling in photoemission from p+-GaAs(Cs,O)Andreev, Vyacheslav Eduardovich · 2005 · Candidate of Sciences01.04.10 Semiconductor physicsDissertationEpitaxial photosensitive structures based on lead-tin telluridesKlimov, Alexander Eduardovich · 2005 · Doctor of Sciences01.04.10 Semiconductor physicsAll works in this specialty