Determination of equilibrium parameters of deep bulk levels in indium antimonide

More works in this specialty

1. Effect of dielectric thickness nonuniformity on the properties of tunnel MOS structures Al/(1-4 nm)SiO2/Si

   Tyaginov, Stanislav Eduardovich · 2006 · Candidate of Sciences

   • 01.04.10 Semiconductor physics
2. Structure and electrophysical properties of tellurium crystals and the Te80Si20 alloy obtained at different gravity levels

   Yakimov, Sergey Vladimirovich · 2005 · Candidate of Sciences

   • 01.04.10 Semiconductor physics
3. Theory of photoelectric phenomena due to the absence of central symmetry of the medium

   Entin, Matvei Vulfovich · 2005 · Doctor of Sciences

   • 01.04.10 Semiconductor physics
4. Kinetics of atomic transformations of a crystalline surface during epitaxial growth and accompanying processes (simulation)

   Yanovitskaya, Zoya Shmerovna · 2003 · Doctor of Sciences

   • 01.04.10 Semiconductor physics
5. Optical properties and structure of amorphous carbon

   Yastrebov, Sergey Guryevich · 2003 · Doctor of Sciences

   • 01.04.10 Semiconductor physics

All works in this specialty