Cover of the work “The Shubnikov–de Haas effect and the electrophysical properties of InxGa1-xAs (0.2≤x≤1) quantum well structures with various metamorphic buffers and a magnetic impurity”. Author: Oveshnikov, Leonid Nikolaevich. Degree: Candidate of Sciences. Year: 2016

The Shubnikov–de Haas effect and the electrophysical properties of InxGa1-xAs (0.2≤x≤1) quantum well structures with various metamorphic buffers and a magnetic impurity

National Research Centre "Kurchatov Institute", Moscow

136 pp.

Keywords

microwave transistors

The Shubnikov–de Haas effect and the electrophysical properties of InxGa1-xAs (0.2≤x≤1) quantum well structures with various metamorphic buffers and a magnetic impurity — Oveshnikov, Leonid Nikolaevich — 2016 — Russian Dissertation Library