Cover of the work “Stability of the atomic structure of silicon oxide after radiation-thermal treatment of MOS devices”. Author: Protopopov, Grigoriy Aleksandrovich. Degree: Candidate of Sciences. Year: 2011

Stability of the atomic structure of silicon oxide after radiation-thermal treatment of MOS devices

National Research Nuclear University, Moscow

106 pp.

Stability of the atomic structure of silicon oxide after radiation-thermal treatment of MOS devices — Protopopov, Grigoriy Aleksandrovich — 2011 — Russian Dissertation Library