Cover of the work “Physicotechnological features of the formation of rectifying and ohmic contacts in silicon semiconductor devices and integrated circuits using titanium and its compounds”. Author: Shevyakov, Vasiliy Ivanovich. Degree: Doctor of Sciences. Year: 1998

Physicotechnological features of the formation of rectifying and ohmic contacts in silicon semiconductor devices and integrated circuits using titanium and its compounds

Moscow

367 pp.

Physicotechnological features of the formation of rectifying and ohmic contacts in silicon semiconductor devices and integrated circuits using titanium and its compounds — Shevyakov, Vasiliy Ivanovich — 1998 — Russian Dissertation Library