Physicotechnological features of the formation of rectifying and ohmic contacts in silicon semiconductor devices and integrated circuits using titanium and its compounds
Shevyakov, Vasiliy Ivanovich, 1998, Doctor of Sciences dissertation
Moscow
367 pp.
More works in this specialty
- Formation of nanoscale coatings by polyion assembly and Langmuir-Blodgett methods and study of their electrophysical properties
Yashchenok, Aleksey Mikhaylovich · 2007 · Candidate of Sciences
- Semiconductor microwave autodynes with a load varying over a wide range of values and their use in microwave interferometer circuits
Postelga, Aleksandr Eduardovich · 2006 · Candidate of Sciences
- Diagnostic methods for assessing the quality and reliability of semiconductor devices using low-frequency noise
Zharkikh, Aleksandr Petrovich · 2005 · Candidate of Sciences
- Method of reactive ion-beam synthesis of thin films directly from ion beams
Shevchuk, Sergey Leonidovich · 2002 · Candidate of Sciences
- Methods and means of modeling dominant radiation effects in integrated circuits under exposure to high-energy nuclear particles : Increasing the reliability of prediction and ensuring the radiation hardness of electronic devices
Chumakov, Aleksandr Innokentievich · 1998 · Doctor of Sciences