Cover of the work “Effects of low-energy ion irradiation during the epitaxy of Ge on Si”. Author: Smagina, Zhanna Viktorovna. Degree: Candidate of Sciences. Year: 2008

Effects of low-energy ion irradiation during the epitaxy of Ge on Si

Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk

211 pp.

Effects of low-energy ion irradiation during the epitaxy of Ge on Si — Smagina, Zhanna Viktorovna — 2008 — Russian Dissertation Library